Interface-dependent magnetotransport properties for thin Pt films on ferrimagnetic Y{sub 3}Fe{sub 5}O{sub 12}

Journal Article · Mon Jun 16 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4883898· OSTI ID:22300259

Shiomi, Y.; Ohtani, T.; Iguchi, S.; Sasaki, T. ^[1]; Qiu, Z. ^[2]; Nakayama, H. ^[1]; Uchida, K. ^[1]; Saitoh, E. ^[1]

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1. Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)
2. WPI Advanced Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)

We have studied magnetoresistance and Hall effects for 1.8-nm-thick Pt films grown on a ferrimagnetic insulator Y{sub 3}Fe{sub 5}O{sub 12} in a wide temperature (0.46–300 K) and magnetic-field (−15 to 15 T) region. In the low-temperature regime where quantum corrections to conductivity are observed, weak antilocalization behavior observed in Pt films is critically suppressed when the film is attached to Y{sub 3}Fe{sub 5}O{sub 12}. Hall resistance in the Pt film is also affected by Y{sub 3}Fe{sub 5}O{sub 12}, and it exhibits logarithmic temperature dependence in a broad temperature range. The magnetotransport properties in the high-field range are significantly influenced by the interface between Pt and Y{sub 3}Fe{sub 5}O{sub 12}.

• OSTI ID: 22300259
• Journal Information: Applied Physics Letters, Vol. 104, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CORRECTIONS
FERRIMAGNETIC MATERIALS
FERRITES
HALL EFFECT
INTERFACES
MAGNETIC FIELDS
MAGNETORESISTANCE
PLATINUM
TEMPERATURE DEPENDENCE
THIN FILMS
YTTRIUM COMPOUNDS