MoS{sub 2} nanotube field effect transistors

Journal Article · Mon Sep 15 00:00:00 EDT 2014 · AIP Advances

DOI:https://doi.org/10.1063/1.4894440· OSTI ID:22300246

Mrzel, A.; Buh, J.; Strle, J. ^[1]; Kovic, A. ^[1]

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1. Jozef Stefan Institute, Jamova cesta 39, 1000 Ljubljana (Slovenia)

We report on electric field effects on electron transport in multi-walled MoS{sub 2} nanotubes (NTs), fabricated using a two-step synthesis method from Mo{sub 6}S{sub x}I{sub 9-x} nanowire bundle precursors. Transport properties were measured on 20 single nanotube field effect transistor (FET) devices, and compared with MoS{sub 2} layered crystal devices prepared using identical fabrication techniques. The NTs exhibited mobilities of up to 0.014 cm{sup 2}V{sup −1}s{sup −1} and an on/off ratio of up to 60. As such they are comparable with previously reported WS{sub 2} nanotube FETs, but materials defects and imperfections apparently limit their performance compared with multilayer MoS{sub 2} FETs with similar number of layers.

• OSTI ID: 22300246
• Journal Information: AIP Advances, Vol. 4, Issue 9; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
77 NANOSCIENCE AND NANOTECHNOLOGY
DEFECTS
ELECTRIC FIELDS
FABRICATION
FIELD EFFECT TRANSISTORS
LAYERS
MOLYBDENUM SULFIDES
NANOTUBES
SYNTHESIS
TUNGSTEN SULFIDES