The effect of post oxide deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/InGaAs gate stack
- Department of Materials Engineering, Technion–Israel Institute of Technology, Haifa 32000 (Israel)
- Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States)
The effect of post oxide deposition annealing on the effective work function in metal/Al{sub 2}O{sub 3}/ InGaAs gate stacks was investigated. Using a systematic method for effective work function extraction, a shift of 0.3 ± 0.1 eV was found between the effective work function of forming gas annealed samples and vacuum annealed samples. The electrical measurements enabled us to obtain the band alignment of the metal/Al{sub 2}O{sub 3}/InGaAs gate stack. This band alignment was confirmed by X-ray photoelectron spectroscopy. The measured shift in the effective work function between different annealing ambient may be attributed to indium out-diffusion during post oxide deposition annealing that is observed in forming gas anneal to a much larger extent than in vacuum.
- OSTI ID:
- 22300216
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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