Surface and electronic structure of epitaxial PtLuSb (001) thin films

Journal Article · Mon May 19 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4879475· OSTI ID:22300214

Patel, Sahil J.; Kawasaki, Jason K.; Logan, John ^[1]; Schultz, Brian D. ^[2]; Adell, J.; Thiagarajan, B. ^[3]; Mikkelsen, A. ^[4]

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1. Materials Department, University of California-Santa Barbara, Santa Barbara, California 93106 (United States)
2. Department of Electrical and Computer Engineering, University of California-Santa Barbara, Santa Barbara, California 93106 (United States)
3. MAX IV Laboratory, Lund University, Lund 221 00 (Sweden)
4. Department of Physics, Lund University, Lund 221 00 (Sweden)

The surface and electronic structure of single crystal thin films of PtLuSb (001) grown by molecular beam epitaxy were studied. Scanning tunneling spectroscopy (STS), photoemission spectroscopy, and temperature dependent Hall measurements of PtLuSb thin films are consistent with a zero-gap semiconductor or semi-metal. STS and photoemission measurements show a decrease in density of states approaching the Fermi level for both valence and conduction bands as well as a slight shift of the Fermi level position into the valence band. Temperature dependent Hall measurements also corroborate the Fermi level position by measurement of p-type carriers.

• OSTI ID: 22300214
• Journal Information: Applied Physics Letters, Vol. 104, Issue 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIMONY COMPOUNDS
CARRIERS
ELECTRONIC STRUCTURE
FERMI LEVEL
HALL EFFECT
LUTETIUM COMPOUNDS
METALS
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
PHOTOEMISSION
PLATINUM COMPOUNDS
SCANNING TUNNELING MICROSCOPY
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
SURFACE PROPERTIES
TEMPERATURE DEPENDENCE
THIN FILMS
TUNNEL EFFECT