Role of electron carriers on local surface plasmon resonances in doped oxide semiconductor nanocrystals

Journal Article · Mon May 26 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4880356· OSTI ID:22300167

Matsui, Hiroaki; Tabata, Hitoshi ^[1]; Furuta, Shinya ^[2]

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1. Department of Bioengineering, The University of Tokyo, Bunkyo-ku, Tokyo 113-8656 (Japan)
2. Tomoe Works Co., Ltd, Minato-ku, Osaka 552-0001 (Japan)

Optical properties of carrier-dependent local surface plasmons (LSPs) were studied using dopant-controlled In{sub 2}O{sub 3}:Sn nanocrystals (NCs). From a systematic correlation between LSP excitations and electron carriers, electron-impurity scattering contributed towards plasmon damping as one of a factor that is absent in metal NCs. A threshold electron density (n{sub e}) from a damping dominated regime to a quenched damping regime appeared at around 10{sup 20} cm{sup −3}. The validity of Mie theory failed in ITO NCs with high n{sub e} greater than 10{sup 20} cm{sup −3} since the role of electron carriers could enhance LSPs with simultaneous damped plasmonic excitations, which is valuable information for optical applications.

• OSTI ID: 22300167
• Journal Information: Applied Physics Letters, Vol. 104, Issue 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CARRIERS
CORRELATIONS
DAMPING
DOPED MATERIALS
ELECTRON DENSITY
ELECTRONS
EXCITATION
IMPURITIES
INDIUM OXIDES
METALS
NANOSTRUCTURES
OPTICAL PROPERTIES
PLASMONS
RESONANCE
SCATTERING
SEMICONDUCTOR MATERIALS
SURFACES
TIN ADDITIONS