Electric field effects on spin accumulation in Nb-doped SrTiO{sub 3} using tunable spin injection contacts at room temperature

Journal Article · Mon May 26 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4880895· OSTI ID:22300115

Kamerbeek, A. M.; Vries, E. K. de; Wees, B. J. van; Dankert, A.; Dash, S. P. ^[1]

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1. Department of Microtechnology and Nanoscience, Chalmers University of Technology, SE-41296 Gothenburg (Sweden)

We report on features in charge transport and spin injection in an oxide semiconductor, Nb-doped SrTiO{sub 3}. This is demonstrated using electrically tunable spin injection contacts which exploit the large electric field at the interface and its interplay with the relative permittivity of the semiconductor. We realize spin accumulation in Nb-doped SrTiO{sub 3} which displays a unique dependence of the spin lifetime with bias polarity. These findings suggest a strong influence of the interface electric field on the charge transport as well as on spin accumulation unlike in conventional semiconductors and opens up promising avenues in oxide spintronics.

• OSTI ID: 22300115
• Journal Information: Applied Physics Letters, Vol. 104, Issue 21; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGE TRANSPORT
DOPED MATERIALS
ELECTRIC FIELDS
INJECTION
INTERFACES
LIFETIME
NIOBIUM ADDITIONS
OXIDES
PERMITTIVITY
SEMICONDUCTOR MATERIALS
SPIN
STRONTIUM TITANATES
TEMPERATURE RANGE 0273-0400 K