Field emission characteristics from graphene on hexagonal boron nitride

Journal Article · Mon Jun 02 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4881718· OSTI ID:22300077

Yamada, Takatoshi ^[1]; Masuzawa, Tomoaki; Ebisudani, Taishi; Okano, Ken ^[2]; Taniguchi, Takashi ^[3]

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1. National Institute of Advanced Industrial Science and Technology, 1-1-1 Higashi, Tsukuba, Ibaraki 305-8565 (Japan)
2. International Christian University, 3-10-2 Osawa, Mitaka, Tokyo 181-8585 (Japan)
3. National Institute for Material Science (NIMS), 1-1-1 Namiki, Tsukuba 305-0044 (Japan)

An attempt has been made to utilize uniquely high electron mobility of graphene on hexagonal boron nitride (h-BN) to electron emitter. The field emission property of graphene/h-BN/Si structure has shown enhanced threshold voltage and emission current, both of which are key to develop novel vacuum nanoelectronics devices. The field emission property was discussed along with the electronic structure of graphene investigated by Fowler-Nordheim plot and ultraviolet photoelectron spectroscopy. The result suggested that transferring graphene on h-BN modified its work function, which changed field emission mechanism. Our report opens up a possibility of graphene-based vacuum nanoelectronics devices with tuned work function.

• OSTI ID: 22300077
• Journal Information: Applied Physics Letters, Vol. 104, Issue 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BORON NITRIDES
CURRENTS
ELECTRIC POTENTIAL
ELECTRON MOBILITY
ELECTRONIC STRUCTURE
ELECTRONS
FIELD EMISSION
FOWLER-NORDHEIM THEORY
GRAPHENE
HEXAGONAL LATTICES
PHOTOELECTRON SPECTROSCOPY
ULTRAVIOLET RADIATION
WORK FUNCTIONS
NANOELECTRONICS