Coexistence of epitaxial lattice rotation and twinning tilt induced by surface symmetry mismatch
- School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu 610054 (China)
- Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States)
Combined x-ray diffraction and first-principles studies of various epitaxial rutile-type metal dioxide films on Al{sub 2}O{sub 3}(0001) substrates reveal an unexpected rectangle-on-parallelogram heteroepitaxy. Unique matching of particular lattice spacings and crystal angles between the oxygen sublattices of Al{sub 2}O{sub 3}(0001) and the film(100) result in coexisted crystal rotation and lattice twinning inside the film. We demonstrate that, besides symmetry and lattice mismatch, angular mismatch along a specific crystal direction is also an important factor determining epitaxy. A generalized theorem has been proposed to explain epitaxial behaviors for tetragonal metal dioxides on Al{sub 2}O{sub 3}(0001).
- OSTI ID:
- 22300076
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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