Fabrication of sub-12 nm thick silicon nanowires by processing scanning probe lithography masks

Journal Article · Mon Jun 02 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4881977· OSTI ID:22300065

Kyoung Ryu, Yu; Garcia, Ricardo ^[1]; Aitor Postigo, Pablo; Garcia, Fernando ^[2]

---

1. Instituto de Ciencia de Materiales de Madrid, CSIC, Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain)
2. Instituto de Microelectrónica de Madrid (IMM-CNM-CSIC), 28760 Tres Cantos, Madrid (Spain)

Silicon nanowires are key elements to fabricate very sensitive mechanical and electronic devices. We provide a method to fabricate sub-12 nm silicon nanowires in thickness by combining oxidation scanning probe lithography and anisotropic dry etching. Extremely thin oxide masks (0.3–1.1 nm) are transferred into nanowires of 2–12 nm in thickness. The width ratio between the mask and the silicon nanowire is close to one which implies that the nanowire width is controlled by the feature size of the nanolithography. This method enables the fabrication of very small single silicon nanowires with cross-sections below 100 nm{sup 2}. Those values are the smallest obtained with a top-down lithography method.

• OSTI ID: 22300065
• Journal Information: Applied Physics Letters, Vol. 104, Issue 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ANISOTROPY
CROSS SECTIONS
ELECTRONIC EQUIPMENT
ETCHING
FABRICATION
OXIDATION
OXIDES
QUANTUM WIRES
SILICON
THICKNESS
NANOWIRES