The effect of Ta interface on the crystallization of amorphous phase change material thin films

Journal Article · Mon Jun 02 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4881927· OSTI ID:22300063

Ghezzi, G. E. ^[1]; Marra, M.; Sabbione, C.; Fillot, F.; Bernier, N.; Ferrand, J.; Maîtrejean, S. ^[1]; Hippert, F. ^[2]

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1. CEA-LETI, MINATEC campus, 17 rue des Martyrs, F 38054 Grenoble (France)
2. LMGP, CNRS Grenoble-INP, MINATEC, 3 parvis Louis Néel, F 38016 Grenoble (France)

The crystallization of amorphous GeTe and Ge{sub 2}Sb{sub 2}Te{sub 5} phase change material films, with thickness between 10 and 100 nm, sandwiched between either Ta or SiO{sub 2} layers, was investigated by optical reflectivity. Ta cladding layers were found to increase the crystallization temperature, even for films as thick as 100 nm. X-Ray diffraction investigations of crystallized GeTe films showed a very weak texture in Ta cladded films, in contrast with the strong texture observed for SiO{sub 2} cladding layers. This study shows that crystallization mechanism of phase change materials can be highly impacted by interface effects, even for relatively thick films.

• OSTI ID: 22300063
• Journal Information: Applied Physics Letters, Vol. 104, Issue 22; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
ANTIMONY COMPOUNDS
CRYSTALLIZATION
GERMANIUM TELLURIDES
INTERFACES
LAYERS
PHASE CHANGE MATERIALS
REFLECTIVITY
SILICA
SILICON OXIDES
THICKNESS
THIN FILMS
X-RAY DIFFRACTION