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Title: Site specific isolated nanostructure array formation on a large area by broad ion beam without any mask and resist

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4881333· OSTI ID:22300044
 [1];  [2]
  1. Variable Energy Cyclotron Centre, 1/AF, Bidhannagar, Kolkata 700064 (India)
  2. Saha Institute of Nuclear Physics, 1/AF, Bidhannagar, Kolkata 700064 (India)

We report the formation of isolated nanostructure arrays on a large area via broad ion beam implantation without the aid of any mask or resist. Desired ions have been implanted at specific locations of the prefabricated silicon ripple or triangular structures by exploiting the variation of local ion impact angles. We have shown that the implantation of Fe ions on an O{sup +} ions induced pre fabricated triangular shaped patterned Si surface results in a self-organized periodic array of striped magnetic nanostructures having several micron length and about 50 nm width arranged with a spacial separation of ∼200 nm. The morphology, composition, crystalline structure, and magnetic property of these nanopatterns have been analyzed using high-resolution cross-sectional transmission electron microscopy and atomic force microscopy. A geometrical model has been proposed to explain the fundamental features of such ion-induced nanopattern structures.

OSTI ID:
22300044
Journal Information:
Applied Physics Letters, Vol. 104, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English

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