Efficient simulation of the impact of interface grading on the transport and optical properties of semiconductor heterostructures

Journal Article · Mon Jun 09 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4882653· OSTI ID:22300029

Lü, X.; Schrottke, L.; Luna, E.; Grahn, H. T. ^[1]

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1. Paul-Drude-Institut für Festkörperelektronik, Hausvogteiplatz 5–7, 10117 Berlin (Germany)

An efficient model is proposed to evaluate the impact of interface grading on the properties of semiconductor heterostructures. In the plane-wave approximation, the interface grading is taken into account by simply multiplying the Fourier components of the potential by a Gaussian function, which results only in a very small increase of the computation time. We show that the interface grading may affect the transition energies, the field strength for resonant coupling of subbands, and even the miniband formation in complex systems such as quantum-cascade lasers. This model provides a convenient tool for the incorporation of interface grading into the design of heterostructures.

• OSTI ID: 22300029
• Journal Information: Applied Physics Letters, Vol. 104, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
COUPLING
ELECTRIC CONDUCTIVITY
GAUSS FUNCTION
INTERFACES
LASER RADIATION
OPTICAL PROPERTIES
SEMICONDUCTOR MATERIALS
SIMULATION
WAVE PROPAGATION