Electrical characteristics and thermal stability of HfO{sub 2} metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces
- National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)
- National Institute for Materials Science (NIMS), Tsukuba, Ibaraki 305-0044 (Japan)
- The University of Tokyo, Tokyo 113-8656 (Japan)
HfO{sub 2}/GaSb interfaces fabricated by high-vacuum HfO{sub 2} deposition on clean reconstructed GaSb surfaces were examined to explore a thermally stable GaSb metal-oxide-semiconductor structure with low interface-state density (D{sub it}). Interface Sb-O bonds were electrically and thermally unstable, and post-metallization annealing at temperatures higher than 200 °C was required to stabilize the HfO{sub 2}/GaSb interfaces. However, the annealing led to large D{sub it} in the upper-half band gap. We propose that the decomposition products that are associated with elemental Sb atoms act as interface states, since a clear correlation between the D{sub it} and the Sb coverage on the initial GaSb surfaces was observed.
- OSTI ID:
- 22300027
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ATOMS
CAPACITORS
CHEMICAL BONDS
CORRELATIONS
DECOMPOSITION
DEPOSITION
ELECTRICAL PROPERTIES
GALLIUM ANTIMONIDES
HAFNIUM OXIDES
INTERFACES
METALS
MOS TRANSISTORS
SEMICONDUCTOR MATERIALS
STABILITY
SURFACES
THERMODYNAMIC PROPERTIES