Band gaps and internal electric fields in semipolar short period InN/GaN superlattices

Journal Article · Mon Jun 09 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4882902· OSTI ID:22300025

Gorczyca, I.; Skrobas, K.; Suski, T. ^[1]; Christensen, N. E.; Svane, A. ^[2]

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1. Institute of High Pressures Physics, UNIPRESS, 01-142 Warsaw (Poland)
2. Department of Physics and Astronomy, Aarhus University, DK-8000 Aarhus C (Denmark)

The electronic structures and internal electric fields of semipolar short-period mInN/nGaN superlattices (SLs) have been calculated for several compositions (m, n). Two types of SL are considered, (112{sup ¯}2) and (202{sup ¯}1), corresponding to growth along the wurtzite s2 and s6 directions, respectively. The results are compared to similar calculations for polar SLs (grown in the c-direction) and nonpolar SLs (grown in the a- and m-directions). The calculated band gaps for the semipolar SLs lie between those calculated for the nonpolar and polar SLs: For s2-SLs they fall slightly below the band gaps of a-plane SLs, whereas for s6-SLs they are considerably smaller.

• OSTI ID: 22300025
• Journal Information: Applied Physics Letters, Vol. 104, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC FIELDS
ELECTRONIC STRUCTURE
GALLIUM NITRIDES
INDIUM NITRIDES
SUPERLATTICES