Effects of sub-bandgap illumination on electrical properties and detector performances of CdZnTe:In
- State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an, Shaanxi 710072 (China)
The effects of sub-bandgap illumination on electrical properties of CdZnTe:In crystals and spectroscopic performances of the fabricated detectors were discussed. The excitation process of charge carriers through thermal and optical transitions at the deep trap could be described by the modified Shockley-Read-Hall model. The ionization probability of the deep donor shows an increase under illumination, which should be responsible for the variation of electrical properties within CdZnTe bulk materials with infrared (IR) irradiation. By applying Ohm's law, diffusion model and interfacial layer-thermionic-diffusion theory, we obtain the decrease of bulk resistivity and the increase of space charge density in the illuminated crystals. Moreover, the illumination induced ionization will further contribute to improving carrier transport property and charge collection efficiency. Consequently, the application of IR irradiation in the standard working environment is of great significance to improve the spectroscopic characteristics of CdZnTe radiation detectors.
- OSTI ID:
- 22300010
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 23; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CADMIUM COMPOUNDS
CHARGE CARRIERS
CHARGE COLLECTION
CRYSTALS
DIFFUSION
ELECTRICAL PROPERTIES
ENERGY-LEVEL TRANSITIONS
EXCITATION
ILLUMINANCE
INDIUM ADDITIONS
IONIZATION
IRRADIATION
LAYERS
OHM LAW
RADIATION DETECTORS
SPACE CHARGE
TELLURIUM COMPOUNDS
TRAPS
ZINC COMPOUNDS