Nondestructive quantitative mapping of impurities and point defects in thin films: Ga and V{sub Zn} in ZnO:Ga

Journal Article · Mon Jun 16 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4884347· OSTI ID:22299894

Leedy, Kevin D.; Agresta, Donald L. ^[1]

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1. Air Force Research Laboratory Sensors Directorate, 2241 Avionics Circle, Wright-Patterson AFB, Ohio 45433 (United States)

Ga-doped ZnO (GZO) films grown by pulsed-laser deposition on quartz and other lattice-mismatched substrates can routinely attain resistivities of 2 × 10{sup −4} Ω·cm and thus compete with Sn-doped In{sub 2}O{sub 3} (ITO) in large-area transparent-electrode applications. Nondestructive, high-resolution (1-mm) maps of thickness d, concentration n, and mobility μ on such films can be obtained automatically from commercial spectroscopic ellipsometers. From n and μ, degenerate-electron scattering theory yields donor N{sub D} and acceptor N{sub A} concentrations at each point. Finally, N{sub D} and N{sub A} can be identified as [Ga] and [V{sub Zn}], respectively, demonstrating high-density mapping of impurities and point defects in a semiconductor thin film.

• OSTI ID: 22299894
• Journal Information: Applied Physics Letters, Vol. 104, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIER MOBILITY
DENSITY
DOPED MATERIALS
ELECTRODES
ELLIPSOMETERS
ENERGY BEAM DEPOSITION
GALLIUM ADDITIONS
IMPURITIES
INDIUM OXIDES
LASER RADIATION
POINT DEFECTS
PULSED IRRADIATION
RESOLUTION
SCATTERING
SEMICONDUCTOR MATERIALS
SUBSTRATES
THICKNESS
THIN FILMS
TIN ADDITIONS
ZINC OXIDES