Mid-infrared electro-luminescence and absorption from AlGaN/GaN-based multi-quantum well inter-subband structures

Journal Article · Mon Jun 16 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4883864· OSTI ID:22299877

Hofstetter, Daniel ^[1]; Bour, David P. ^[2]; Kirste, Lutz ^[3]

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1. University of Neuchâtel, Institute of Physics, 51 Avenue de Bellevaux, Neuchâtel, CH–2009 (Switzerland)
2. Avogy, Inc., 677 River Oaks Parkway, San Jose, California 95134 (United States)
3. Fraunhofer Institute for Applied Solid State Physics (IAF), Tullastrasse 72, D-79108 Freiburg i. Brsg. (Germany)

We present electro-modulated absorption and electro-luminescence measurements on chirped AlGaN/GaN-based multi-quantum well inter-subband structures grown by metal-organic vapour phase epitaxy. The absorption signal is a TM-polarized, 70 meV wide feature centred at 230 meV. At medium injection current, a 58 meV wide luminescence peak corresponding to an inter-subband transition at 1450 cm{sup −1} (180 meV) is observed. Under high injection current, we measured a 4 meV wide structure peaking at 92.5 meV in the luminescence spectrum. The energy location of this peak is exactly at the longitudinal optical phonon of GaN.

• OSTI ID: 22299877
• Journal Information: Applied Physics Letters, Vol. 104, Issue 24; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ALUMINIUM COMPOUNDS
CURRENTS
ELECTROLUMINESCENCE
GALLIUM NITRIDES
INJECTION
ORGANOMETALLIC COMPOUNDS
PHONONS
QUANTUM WELLS
SPECTRA
VAPOR PHASE EPITAXY