Tunable electronic properties of silicon nanowires under strain and electric bias

Journal Article · Tue Jul 15 00:00:00 EDT 2014 · AIP Advances

DOI:https://doi.org/10.1063/1.4890674· OSTI ID:22299778

Nduwimana, Alexis ^[1]; Wang, Xiao-Qian ^[1]

---

1. Department of Physics and Center for Functional Nanoscale Materials, Clark Atlanta University, Atlanta, Georgia 30314 (United States)

The electronic structure characteristics of silicon nanowires under strain and electric bias are studied using first-principles density functional theory. The unique wire-like structure leads to distinct spatial distribution of carriers, which can be tailored by applying tensile and compressive strains, as well as by an electric bias. Our results indicate that the combined effect of strain and electric bias leads to tunable electronic structures that can be used for piezo-electric devices.

• OSTI ID: 22299778
• Journal Information: AIP Advances, Vol. 4, Issue 7; Other Information: (c) 2014 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DENSITY FUNCTIONAL METHOD
ELECTRONIC STRUCTURE
QUANTUM WIRES
SILICON
SPATIAL DISTRIBUTION
STRAINS