Temperature-dependent photocarrier recombination dynamics in Cu{sub 2}ZnSnS{sub 4} single crystals
- Institute for Chemical Research, Kyoto University, Uji, Kyoto 611-0011 (Japan)
- Department of Applied Physics and Electronic Engineering, University of Miyazaki, Miyazaki 889-2192 (Japan)
Time-resolved photoluminescence (PL) measurements have been used to study the temperature-dependent photocarrier recombination dynamics in Cu{sub 2}ZnSnS{sub 4} (CZTS) single crystals. We found a significant change of nearly four orders of magnitude of the PL decay time, from microseconds at low temperatures to subnanoseconds at room temperature. The slow PL decay at low temperatures indicates localization of the photocarriers at the band tails. Due to the large band tail states, the PL decay time depends strongly on both the photon energy and excitation density. It is pointed out that the drastically enhanced nonradiative recombination at high temperatures is one of the main factors that determine the power conversion efficiency of CZTS-based solar cells.
- OSTI ID:
- 22293101
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
14 SOLAR ENERGY
CONVERSION
COPPER COMPOUNDS
EFFICIENCY
EXCITATION
MONOCRYSTALS
PHOTOLUMINESCENCE
RECOMBINATION
SOLAR CELLS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K
TEMPERATURE RANGE 0400-1000 K
TIME RESOLUTION
TIN SULFIDES