Deep-level transient spectroscopy on an amorphous InGaZnO{sub 4} Schottky diode
- imec, Kapeldreef 75, 3001 Leuven (Belgium)
- ESAT, KU Leuven, Kasteelpark Arenberg 10, 3001 Leuven (Belgium)
The first direct measurement is reported of the bulk density of deep states in amorphous IGZO (indium-gallium-zinc oxide) semiconductor by means of deep-level transient spectroscopy (DLTS). The device under test is a Schottky diode of amorphous IGZO semiconductor on a palladium (Pd) Schottky-barrier electrode and with a molybdenum (Mo) Ohmic contact at the top. The DLTS technique allows to independently measure the energy and spatial distribution of subgap states in the IGZO thin film. The subgap trap concentration has a double exponential distribution as a function energy, with a value of ∼10{sup 19} cm{sup −3} eV{sup −1} at the conduction band edge and a value of ∼10{sup 17} cm{sup −3} eV{sup −1} at an energy of 0.55 eV below the conduction band. Such spectral distribution, however, is not uniform through the semiconductor film. The spatial distribution of subgap states correlates well with the background doping density distribution in the semiconductor, which increases towards the Ohmic Mo contact, suggesting that these two properties share the same physical origin.
- OSTI ID:
- 22293050
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BULK DENSITY
CONCENTRATION RATIO
DEEP LEVEL TRANSIENT SPECTROSCOPY
ELECTRODES
ENERGY DEPENDENCE
GALLIUM OXIDES
INDIUM OXIDES
MOLYBDENUM
PALLADIUM
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR MATERIALS
SPATIAL DISTRIBUTION
THIN FILMS
ZINC OXIDES