Temperature-dependent measurement of Auger recombination in In{sub 0.40}Ga{sub 0.60}N/GaN red-emitting (λ = 630 nm) quantum dots
- Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)
We have derived the Auger recombination coefficients, as a function of temperature, for In{sub 0.4}Ga{sub 0.6}N/GaN self-organized quantum dots from large-signal modulation measurements made on lasers in which the quantum dots form the gain media. The value of C{sub a} = 1.3 ±0.2 × 10{sup −31} cm{sup 6} s{sup −1} at room temperature and the coefficient decreases with increase of temperature.
- OSTI ID:
- 22293043
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 8; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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