Photosensitivity of pulsed laser deposited Ge{sub 20}As{sub 20}Se{sub 60} and Ge{sub 10}As{sub 30}Se{sub 60} amorphous thin films
- Department of Graphic Arts and Photophysics, Faculty of Chemical Technology, University of Pardubice, Studentská 573, 53210 Pardubice (Czech Republic)
- Chemical Sciences Institute of Rennes (ISCR), Glasses and Ceramics Team, UMR-CNRS 6226, University of Rennes 1, 35042 Rennes Cedex (France)
Graphical abstract: - Highlights: • Amorphous Ge{sub 20}As{sub 20}Se{sub 60}/Ge{sub 10}As{sub 30}Se{sub 60} films are fabricated by pulsed laser deposition. • Photosensitivity of the layers is studied by employing spectroscopic ellipsometry. • As-deposited/relaxed thin films were irradiated by 593, 635, and 660 nm lasers. • Ge{sub 20}As{sub 20}Se{sub 60} layers present almost zero photorefraction in relaxed state. - Abstract: Amorphous Ge{sub 20}As{sub 20}Se{sub 60} and Ge{sub 10}As{sub 30}Se{sub 60} thin films are fabricated by pulsed laser deposition. Prepared films are characterized in terms of their morphology, chemical composition, and optical properties. Special attention is given to the photosensitivity of the layers, which was studied by spectroscopic ellipsometry with as-deposited, annealed and exposed films by three different laser sources (593, 635, and 660 nm). The results show better photostability for Ge{sub 20}As{sub 20}Se{sub 60} thin films, where photoinduced change of optical band gap was found to be equal or less than 0.04 eV and these layers present almost zero photorefraction.
- OSTI ID:
- 22285113
- Journal Information:
- Materials Research Bulletin, Vol. 48, Issue 10; Other Information: Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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