Inverse spin Hall effect induced by spin pumping into semiconducting ZnO

Journal Article · Mon Feb 03 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4863750· OSTI ID:22283274

Lee, Jung-Chuan ^[1]; Huang, Leng-Wei ^[2]; Hung, Dung-Shing ^[1]; Chiang, Tung-Han ^[3]; Huang, J. C. A., ^[3]; Liang, Jun-Zhi ^[4]; Lee, Shang-Fan ^[1]

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1. Institute of Physics, Academia Sinica, Taipei 11529, Taiwan (China)
2. Graduate Institute of Applied Physics, National Chengchi University, Taipei 11605, Taiwan (China)
3. Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China)
4. Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China)

The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered.

• OSTI ID: 22283274
• Journal Information: Applied Physics Letters, Vol. 104, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
EXCHANGE INTERACTIONS
EXCITATION
FERROMAGNETIC RESONANCE
HALL EFFECT
LAYERS
L-S COUPLING
MICROWAVE RADIATION
PERMALLOY
PUMPING
SEMICONDUCTOR MATERIALS
SPIN
THIN FILMS
ZINC OXIDES