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Title: Spin correlated dielectric memory and rejuvenation in multiferroic CuCrS{sub 2}

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4863937· OSTI ID:22283257
; ; ;  [1];  [2]
  1. Department of Solid State Physics, Indian Association for the Cultivation of Science, Jadavpur, Kolkata 700 032 (India)
  2. UGC-DAE Consortium for Scientific Research, Kolkata Centre, Salt Lake, Kolkata 700 098 (India)

We report a rare consequence of memory effect in dielectric response (ϵ) and magnetic field induced rejuvenation in a relaxor-type multiferroic chalcogenide, CuCrS{sub 2}. Despite reasonably high conductivity, we are able to detect significant spontaneous polarization using an improvised technique verifying ferroelectric (FE) order. Concomitant appearance of both FE and antiferromagnetic orders authenticates multiferroicity. A smeared out FE transition and strong frequency dependence of the broadened peak in ϵ obeying Dynamical scaling law signify relaxor properties. We discuss the role of geometrical frustration in the antiferromagnetically coupled layered triangular lattice and metal ligand hybridization for these unusual properties.

OSTI ID:
22283257
Journal Information:
Applied Physics Letters, Vol. 104, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English