Observation of the in-plane spin-dephasing anisotropy in [111]-grown GaAs/AlGaAs quantum well

Journal Article · Mon Feb 03 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4864183· OSTI ID:22283254

Zhao, Chunbo; Li, Junbin; Yu, Ying; Ni, Haiqiao; Niu, Zhichuan; Zhang, Xinhui ^[1]

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1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

The electron density and temperature dependent in-plane spin-dephasing anisotropy in [111]-grown GaAs quantum well (QW) has been investigated by time-resolved magneto-Kerr rotation technique. Due to the specific symmetry of [111]-grown quantum well, the in-plane Rashba and linear Dresselhaus effective spin-orbit magnetic field is parallel to each other for electron wave vectors in all directions. However, an obvious in-plane spin-dephasing anisotropy comparing [2{sup ¯}11] with [01{sup ¯}1] crystalline orientations has been observed and discussed in this work. Our results demonstrate the innegligible spin dephasing channel through inhomogeneous broadening induced by the out-of-plane non-linear Dresselhaus field, which arises naturally from the C{sub 3} symmetry of [111]-grown GaAs QW.

• OSTI ID: 22283254
• Journal Information: Applied Physics Letters, Vol. 104, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM ARSENIDES
ANISOTROPY
COMPARATIVE EVALUATIONS
CRYSTAL GROWTH
ELECTRON DENSITY
GALLIUM ARSENIDES
L-S COUPLING
MAGNETIC FIELDS
NONLINEAR PROBLEMS
QUANTUM WELLS
ROTATION
SPIN
TEMPERATURE DEPENDENCE
TIME RESOLUTION