3 ns single-shot read-out in a quantum dot-based memory structure

Journal Article · Mon Feb 03 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4864281· OSTI ID:22283234

Bimberg, D. ^[1]; Beckel, A.; Lorke, A.; Geller, M. ^[2]

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1. Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstrasse 36, 10623 Berlin (Germany)
2. Faculty of Physics and CENIDE, Universität Duisburg-Essen, Lotharstrasse 1, 47048 Duisburg (Germany)

Fast read-out of two to six charges per dot from the ground and first excited state in a quantum dot (QD)-based memory is demonstrated using a two-dimensional electron gas. Single-shot measurements on modulation-doped field-effect transistor structures with embedded InAs/GaAs QDs show read-out times as short as 3 ns. At low temperature (T = 4.2 K) this read-out time is still limited by the parasitics of the setup and the device structure. Faster read-out times and a larger read-out signal are expected for an improved setup and device structure.

• OSTI ID: 22283234
• Journal Information: Applied Physics Letters, Vol. 104, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DOPED MATERIALS
ELECTRON GAS
EXCITED STATES
FIELD EFFECT TRANSISTORS
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
MODULATION
QUANTUM DOTS
READOUT SYSTEMS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0000-0013 K