Native defects affecting the Li atom distribution tune the optical emission of ZnO:Li epitaxial thin film

Journal Article · Mon Feb 03 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4864362· OSTI ID:22283223

Sahu, R.; Dileep, K.; Loukya, B.

It is found that the oxygen vacancy (V{sub O}) defect concentration affecting the separation between individual species in Li{sub Zn}-Li{sub i} complex influences the optical emission property of Li{sub 0.06}Zn{sub 0.94}O epitaxial thin film grown by pulsed laser deposition. The film grown under low oxygen partial pressure (n-type conductivity)/higher partial pressure (resistive-type) has broad emission at ∼2.99 eV/∼2.1 eV and a narrower emission at 3.63 eV/3.56 eV, respectively. First principle based mBJLDA electronic structure calculation suggests that the emission at 2.99 eV is due to the Li{sub Zn}-Li{sub i} pair complex and the emission at 2.1 eV is when the component species are away from each other.

• OSTI ID: 22283223
• Journal Information: Applied Physics Letters, Vol. 104, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ATOMS
CONCENTRATION RATIO
ELECTRIC CONDUCTIVITY
ELECTRONIC STRUCTURE
ENERGY BEAM DEPOSITION
EPITAXY
EV RANGE
LASER RADIATION
LITHIUM
OXYGEN
PARTIAL PRESSURE
PHOTON EMISSION
PULSED IRRADIATION
THIN FILMS
VACANCIES
ZINC OXIDES