Direct imaging of electron recombination and transport on a semiconductor surface by femtosecond time-resolved photoemission electron microscopy

Journal Article · Mon Feb 03 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4864279· OSTI ID:22283214

Fukumoto, Keiki; Yamada, Yuki; Koshihara, Shin-ya ^[1]; Onda, Ken ^[1]

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1. Tokyo Institute of Technology, Meguro-ku, Tokyo 152-8550 (Japan)

Much effort has been devoted to the development of techniques to probe carrier dynamics, which govern many semiconductor device characteristics. We report direct imaging of electron dynamics on semiconductor surfaces by time-resolved photoemission electron microscopy using femtosecond laser pulses. The experiments utilized a variable-repetition-rate femtosecond laser system to suppress sample charging problems. The recombination of photogenerated electrons and the lateral motion of the electrons driven by an external electric field on a GaAs surface were visualized. The mobility was estimated from a linear relationship between the drift velocity and the potential gradient.

• OSTI ID: 22283214
• Journal Information: Applied Physics Letters, Vol. 104, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIER MOBILITY
CHARGE CARRIERS
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
ELECTRON MICROSCOPY
ELECTRONS
GALLIUM ARSENIDES
LASER RADIATION
PHOTOEMISSION
POTENTIALS
RECOMBINATION
SEMICONDUCTOR MATERIALS
SURFACES
TIME RESOLUTION