Investigation of high hole mobility In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum well structures grown by molecular beam epitaxy

Journal Article · Mon Feb 03 04:00:00 UTC 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4865091· OSTI ID:22283211

Wang, Juan; Xing, Jun-Liang; Xiang, Wei; Wang, Guo-Wei; Xu, Ying-Qiang; Ren, Zheng-Wei; Niu, Zhi-Chuan ^[1]

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1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083 (China)

Modulation-doped In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb quantum-well (QW) structures were grown by molecular beam epitaxy. Cross-sectional transmission electron microscopy and atomic force microscopy studies show high crystalline quality and smooth surface morphology. X-ray diffraction investigations confirm 1.94% compressive strain within In{sub 0.41}Ga{sub 0.59}Sb channel. High room temperature hole mobility with high sheet density of 1000 cm{sup 2}/Vs, 0.877 × 10{sup 12}/cm{sup 2}, and 965 cm{sup 2}/Vs, 1.112 × 10{sup 12}/cm{sup 2} were obtained with different doping concentrations. Temperature dependent Hall measurements show different scattering mechanisms on hole mobility at different temperature range. The sheet hole density keeps almost constantly from 300 K to 77 K. This study shows great potential of In{sub 0.41}Ga{sub 0.59}Sb/Al{sub 0.91}Ga{sub 0.09}Sb QW for high-hole-mobility device applications.

• OSTI ID: 22283211
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM COMPOUNDS
ATOMIC FORCE MICROSCOPY
CONCENTRATION RATIO
DOPED MATERIALS
GALLIUM ANTIMONIDES
HALL EFFECT
HETEROJUNCTIONS
HOLE MOBILITY
HOLES
INDIUM COMPOUNDS
MODULATION
MOLECULAR BEAM EPITAXY
MORPHOLOGY
QUANTUM WELLS
SHEETS
STRAINS
SURFACES
TEMPERATURE DEPENDENCE
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION