Polarization matching design of InGaN-based semi-polar quantum wells—A case study of (112{sup ¯}2) orientation

Journal Article · Mon Feb 03 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4864478· OSTI ID:22283201

Kozlowski, Grzegorz; Schulz, Stefan; Corbett, Brian ^[1]

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1. Tyndall National Institute, Lee Maltings, Cork (Ireland)

We present a theoretical study of the polarization engineering in semi-polar III-nitrides heterostructures. As a case study, we investigate the influence of GaN, AlGaN, and AlInN barrier material on the performance of semi-polar (112{sup ¯}2) InGaN-based quantum wells (QWs) for blue (450 nm) and yellow (560 nm) emission. We show that the magnitude of the total built-in electric field across the QW can be controlled by the barrier material. Our results indicate that AlInN is a promising candidate to achieve (i) reduced wavelength shifts with increasing currents and (ii) strongly increased electron-hole wave function overlap, important for reduced optical recombination times.

• OSTI ID: 22283201
• Journal Information: Applied Physics Letters, Vol. 104, Issue 5; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
DESIGN
DIFFUSION BARRIERS
ELECTRIC FIELDS
GALLIUM NITRIDES
HETEROJUNCTIONS
HOLES
INDIUM COMPOUNDS
ORIENTATION
PERFORMANCE
PHOTON EMISSION
POLARIZATION
QUANTUM WELLS
RECOMBINATION
WAVE FUNCTIONS