The origin of 2.7 eV luminescence and 5.2 eV excitation band in hafnium oxide
- A. V. Rzhanov Institute of Semiconductor Physics of SB RAS, 13 Lavrentieva Ave, 630090 Novosibirsk (Russian Federation)
- Boreskov Institute of Catalysis of SB RAS, 5 Lavrentieva Ave, 630090 Novosibirsk (Russian Federation)
- Novosibirsk State University, 2 Pirogova St., 630090 Novosibirsk (Russian Federation)
- Ioffe Physicotechnical Institute of RAS, 26 Politechnicheskaya St., 194021 St. Petersburg (Russian Federation)
The origin of a blue luminescence band at 2.7 eV and a luminescence excitation band at 5.2 eV of hafnia has been studied in stoichiometric and non-stoichiometric hafnium oxide films. Experimental and calculated results from the first principles valence band spectra showed that the stoichiometry violation leads to the formation of the peak density of states in the band gap caused by oxygen vacancies. Cathodoluminescence in the non-stoichiometric film exhibits a band at 2.65 eV that is excited at the energy of 5.2 eV. The optical absorption spectrum calculated for the cubic phase of HfO{sub 2} with oxygen vacancies shows a peak at 5.3 eV. Thus, it could be concluded that the blue luminescence band at 2.7 eV and HfO{sub x} excitation peak at 5.2 eV are due to oxygen vacancies. The thermal trap energy in hafnia was estimated.
- OSTI ID:
- 22283136
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
The Evolution of the Conductivity and Cathodoluminescence of the Films of Hafnium Oxide in the Case of a Change in the Concentration of Oxygen Vacancies
Cathodo- and photoluminescence increase in amorphous hafnium oxide under annealing in oxygen