On the origin of the electron blocking effect by an n-type AlGaN electron blocking layer

Journal Article · Mon Feb 17 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4866041· OSTI ID:22283108

Zhang, Zi-Hui; Ji, Yun; Liu, Wei; Tiam Tan, Swee; Kyaw, Zabu; Ju, Zhengang; Zhang, Xueliang; Hasanov, Namig; Lu, Shunpeng; Zhang, Yiping; Zhu, Binbin

In this work, the origin of electron blocking effect of n-type Al{sub 0.25}Ga{sub 0.75}N electron blocking layer (EBL) for c+ InGaN/GaN light-emitting diodes has been investigated through dual-wavelength emission method. It is found that the strong polarization induced electric field within the n-EBL reduces the thermal velocity and correspondingly the mean free path of the hot electrons. As a result, the electron capture efficiency of the multiple quantum wells is enhanced, which significantly reduces the electron overflow from the active region and increases the radiative recombination rate with holes.

• OSTI ID: 22283108
• Journal Information: Applied Physics Letters, Vol. 104, Issue 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM COMPOUNDS
CHANNELING
DEPLETION LAYER
EFFICIENCY
ELECTRIC FIELDS
ELECTRON CAPTURE
ELECTRONS
GALLIUM NITRIDES
HETEROJUNCTIONS
HOLES
LIGHT EMITTING DIODES
MEAN FREE PATH
N-TYPE CONDUCTORS
POLARIZATION
QUANTUM WELLS
RECOMBINATION