Elimination of columnar microstructure in N-face InAlN, lattice-matched to GaN, grown by plasma-assisted molecular beam epitaxy in the N-rich regime

Journal Article · Mon Feb 17 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4866435· OSTI ID:22283100

Ahmadi, Elaheh; Wienecke, Steven; Keller, Stacia; Mishra, Umesh K. ^[1]; Shivaraman, Ravi; Wu, Feng; Kaun, Stephen W.; Speck, James S. ^[2]

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1. Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106 (United States)
2. Materials Department, University of California, Santa Barbara, California 93106 (United States)

The microstructure of N-face InAlN layers, lattice-matched to GaN, was investigated by scanning transmission electron microscopy and atom probe tomography. These layers were grown by plasma-assisted molecular beam epitaxy (PAMBE) in the N-rich regime. Microstructural analysis shows an absence of the lateral composition modulation that was previously observed in InAlN films grown by PAMBE. A room temperature two-dimensional electron gas (2DEG) mobility of 1100 cm{sup 2}/V s and 2DEG sheet charge density of 1.9 × 10{sup 13} cm{sup −2} was measured for N-face GaN/AlN/GaN/InAlN high-electron-mobility transistors with lattice-matched InAlN back barriers.

• OSTI ID: 22283100
• Journal Information: Applied Physics Letters, Vol. 104, Issue 7; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
CHARGE DENSITY
DIFFUSION BARRIERS
ELECTRON GAS
ELECTRON MOBILITY
GALLIUM NITRIDES
INDIUM COMPOUNDS
LAYERS
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY