skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Hetero-epitaxial EuO interfaces studied by analytic electron microscopy

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4867161· OSTI ID:22283092
 [1]; ; ;  [2]; ;  [3]; ;  [1];  [2]
  1. School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853 (United States)
  2. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States)
  3. Zentrum für Elektronische Korrelationen und Magnetismus, Universität Augsburg, Universitätsstraße 1, D-86159 Augsburg (Germany)

With nearly complete spin polarization, the ferromagnetic semiconductor europium monoxide could enable next-generation spintronic devices by providing efficient ohmic spin injection into silicon. Spin injection is greatly affected by the quality of the interface between the injector and silicon. Here, we use atomic-resolution scanning transmission electron microscopy in conjunction with electron energy loss spectroscopy to directly image and chemically characterize a series of EuO|Si and EuO|YAlO{sub 3} interfaces fabricated using different growth conditions. We identify the presence of europium silicides and regions of disorder at the EuO|Si interfaces, imperfections that could significantly reduce spin injection efficiencies via spin-flip scattering.

OSTI ID:
22283092
Journal Information:
Applied Physics Letters, Vol. 104, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English