Hetero-epitaxial EuO interfaces studied by analytic electron microscopy
- School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853 (United States)
- Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853 (United States)
- Zentrum für Elektronische Korrelationen und Magnetismus, Universität Augsburg, Universitätsstraße 1, D-86159 Augsburg (Germany)
With nearly complete spin polarization, the ferromagnetic semiconductor europium monoxide could enable next-generation spintronic devices by providing efficient ohmic spin injection into silicon. Spin injection is greatly affected by the quality of the interface between the injector and silicon. Here, we use atomic-resolution scanning transmission electron microscopy in conjunction with electron energy loss spectroscopy to directly image and chemically characterize a series of EuO|Si and EuO|YAlO{sub 3} interfaces fabricated using different growth conditions. We identify the presence of europium silicides and regions of disorder at the EuO|Si interfaces, imperfections that could significantly reduce spin injection efficiencies via spin-flip scattering.
- OSTI ID:
- 22283092
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINATES
ELECTRONS
ENERGY-LOSS SPECTROSCOPY
EPITAXY
EUROPIUM OXIDES
EUROPIUM SILICIDES
FERROMAGNETISM
HETEROJUNCTIONS
INTERFACES
MAGNETIC SEMICONDUCTORS
SCANNING ELECTRON MICROSCOPY
SILICON
SPIN
SPIN FLIP
SPIN ORIENTATION
TRANSMISSION ELECTRON MICROSCOPY
YTTRIUM COMPOUNDS