Crystallinity dependence of resistive switching in Ti/Pr(Sr{sub 0.1}Ca{sub 0.9}){sub 2}Mn{sub 2}O{sub 7}/Pt: Filamentary versus interfacial mechanisms
- College of Physics Science and Information Engineering, Hebei Normal University, Shijiazhuang 050024 (China)
The resistive switching characteristics of two Pr(Sr{sub 0.1}Ca{sub 0.9}){sub 2}Mn{sub 2}O{sub 7} (PSCMO)-based devices (Ti/PSCMO-1/Pt and Ti/PSCMO-2/Pt) prepared under different conditions have been investigated. The two devices both showed bipolar switching behaviors. Scanning electron microscope measurements showed different grain boundaries in the two PSCMO films. By fitting the I-V curves and area dependence of the device resistance, we found that the Ti/PSCMO-1/Pt device indicated filamentary conduction, whereas interfacial effects dominated the conductance in Ti/PSCMO-2/Pt device. Our results suggest that the different grain boundaries may play a critical role in oxygen vacancy movement and hence result in the two different resistive switching properties.
- OSTI ID:
- 22283081
- Journal Information:
- Applied Physics Letters, Vol. 104, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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