Investigation of crystalline and electronic band alignment properties of GaP/Ge(111) heterostructure

Journal Article · Mon Mar 03 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4867526· OSTI ID:22283069

Dixit, V. K.; Kumar, Shailendra; Singh, S. D.; Khamari, S. K.; Kumar, R.; Tiwari, Pragya; Sharma, T. K.; Oak, S. M. ^[1]; Phase, D. M. ^[2]

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1. Raja Ramanna Centre for Advanced Technology, Indore, Madhya Pradesh 452013 (India)
2. UGC-DAE Consortium for Scientific Research, Khandwa Road, Indore, Madhya Pradesh 452001 (India)

Gallium phosphide (GaP) epitaxial layer and nanostructures are grown on n-Ge(111) substrates using metal organic vapour phase epitaxy. It is confirmed by high resolution x-ray diffraction measurements that the layer is highly crystalline and oriented with the coexistence of two domains, i.e., GaP(111)A and GaP(111)B, with an angle of 60° between them due to the formation of a wurtzite monolayer at the interface. The valence band offset between GaP and Ge is 0.7 ± 0.1 eV as determined from the valence band onsets and from Kraut's method. A band alignment diagram for GaP/Ge/GeOx is also constructed which can be used to design monolithic optoelectronic integrated circuits.

• OSTI ID: 22283069
• Journal Information: Applied Physics Letters, Vol. 104, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
CRYSTAL STRUCTURE
ELECTRONIC STRUCTURE
GALLIUM PHOSPHIDES
GERMANIUM
INTERFACES
LAYERS
NANOSTRUCTURES
ORGANOMETALLIC COMPOUNDS
PHASE DIAGRAMS
SUBSTRATES
VALENCE
VAPOR PHASE EPITAXY
X-RAY DIFFRACTION