Coherent acoustic phonon generation in GaAs{sub 1−x}Bi{sub x}

Journal Article · Mon Mar 03 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4867702· OSTI ID:22283067

Joshya, R. S.; Ptak, A. J.; France, R.; Mascarenhas, A. ^[1]

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1. National Renewable Energy Laboratory (NREL), 1617 Cole Blvd., Golden, Colorado 80401 (United States)

We have used femtosecond laser pulses to generate coherent acoustic phonons in the dilute Bismide alloy, GaAs{sub 1−x}Bi{sub x}. The observed oscillation periods match well with the oscillation periods calculated using the propagating strain pulse model. We attribute the generation process predominantly to electronic stress due to the absorption of the laser pulse at the surface of the GaAs{sub 1−x}Bi{sub x} layer. Our initial estimates suggest that the incorporation of Bi in GaAs causes an enhancement of the hydrostatic deformation potential because of the resonant state in the valence band due to isolated Bi impurities.

• OSTI ID: 22283067
• Journal Information: Applied Physics Letters, Vol. 104, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
BISMUTH
BISMUTH COMPOUNDS
DEFORMATION
ELECTRONIC STRUCTURE
GALLIUM ARSENIDES
LASER RADIATION
LAYERS
OSCILLATIONS
PHONONS
POTENTIALS
STRAINS
STRESSES
SURFACES
VALENCE