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Title: Determination of charge-carrier diffusion length in the photosensing layer of HgCdTe n-on-p photovoltaic infrared focal plane array detectors

Abstract

In the present paper, we propose a method for evaluating the bulk diffusion length of minority charge carriers in the photosensing layer of photovoltaic focal plane array (FPA) photodetectors. The method is based on scanning a strip-shaped illumination spot with one of the detector diodes at a low level of photocurrents j{sub ph} being registered; such scanning provides data for subsequent analysis of measured spot-scan profiles within a simple diffusion model. The asymptotic behavior of the effective (at j{sub ph} ≠ 0) charge-carrier diffusion length l{sub d} {sub eff} as a function of j{sub ph} for j{sub ph} → 0 inferred from our experimental data proved to be consistent with the behavior of l{sub d} {sub eff} vs j{sub ph} as predicted by the model, while the obtained values of the bulk diffusion length of minority carriers (electrons) in the p-HgCdTe film of investigated HgCdTe n-on-p FPA photodetectors were found to be in a good agreement with the previously reported carrier diffusion-length values for HgCdTe.

Authors:
; ; ;  [1]
  1. Institute of Semiconductor Physics, Russian Academy of Science, Siberian Division, 13, Acad. Lavrent'ev Avenue, Novosibirsk 630090 (Russian Federation)
Publication Date:
OSTI Identifier:
22283048
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 104; Journal Issue: 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ASYMPTOTIC SOLUTIONS; CADMIUM TELLURIDES; CHARGE CARRIERS; DIFFUSION; DIFFUSION LENGTH; ELECTRONS; LAYERS; MERCURY COMPOUNDS; PHOTOCURRENTS; PHOTODETECTORS; PHOTOVOLTAIC EFFECT; THIN FILMS

Citation Formats

Vishnyakov, A. V., Stuchinsky, V. A., E-mail: stuchin@isp.nsc.ru, Brunev, D. V., Zverev, A. V., and Dvoretsky, S. A. Determination of charge-carrier diffusion length in the photosensing layer of HgCdTe n-on-p photovoltaic infrared focal plane array detectors. United States: N. p., 2014. Web. doi:10.1063/1.4867349.
Vishnyakov, A. V., Stuchinsky, V. A., E-mail: stuchin@isp.nsc.ru, Brunev, D. V., Zverev, A. V., & Dvoretsky, S. A. Determination of charge-carrier diffusion length in the photosensing layer of HgCdTe n-on-p photovoltaic infrared focal plane array detectors. United States. https://doi.org/10.1063/1.4867349
Vishnyakov, A. V., Stuchinsky, V. A., E-mail: stuchin@isp.nsc.ru, Brunev, D. V., Zverev, A. V., and Dvoretsky, S. A. 2014. "Determination of charge-carrier diffusion length in the photosensing layer of HgCdTe n-on-p photovoltaic infrared focal plane array detectors". United States. https://doi.org/10.1063/1.4867349.
@article{osti_22283048,
title = {Determination of charge-carrier diffusion length in the photosensing layer of HgCdTe n-on-p photovoltaic infrared focal plane array detectors},
author = {Vishnyakov, A. V. and Stuchinsky, V. A., E-mail: stuchin@isp.nsc.ru and Brunev, D. V. and Zverev, A. V. and Dvoretsky, S. A.},
abstractNote = {In the present paper, we propose a method for evaluating the bulk diffusion length of minority charge carriers in the photosensing layer of photovoltaic focal plane array (FPA) photodetectors. The method is based on scanning a strip-shaped illumination spot with one of the detector diodes at a low level of photocurrents j{sub ph} being registered; such scanning provides data for subsequent analysis of measured spot-scan profiles within a simple diffusion model. The asymptotic behavior of the effective (at j{sub ph} ≠ 0) charge-carrier diffusion length l{sub d} {sub eff} as a function of j{sub ph} for j{sub ph} → 0 inferred from our experimental data proved to be consistent with the behavior of l{sub d} {sub eff} vs j{sub ph} as predicted by the model, while the obtained values of the bulk diffusion length of minority carriers (electrons) in the p-HgCdTe film of investigated HgCdTe n-on-p FPA photodetectors were found to be in a good agreement with the previously reported carrier diffusion-length values for HgCdTe.},
doi = {10.1063/1.4867349},
url = {https://www.osti.gov/biblio/22283048}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 9,
volume = 104,
place = {United States},
year = {Mon Mar 03 00:00:00 EST 2014},
month = {Mon Mar 03 00:00:00 EST 2014}
}