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Title: Oxidation of SnO to SnO{sub 2} thin films in boiling water at atmospheric pressure

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4867654· OSTI ID:22283043
; ; ;  [1]
  1. Institute of Industrial Science, The University of Tokyo, 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505 (Japan)

We demonstrated that SnO is oxidized to SnO{sub 2} in boiling water. (001)-oriented SnO thin films were pulsed-laser deposited onto a glass substrate. The Sn valence number changed from (II) to (IV) by keeping SnO films in boiling water at atmospheric pressure for 5 h. Optical transparency of the obtained SnO{sub 2} films was greater than 95% in the visible light range. The SnO{sub 2} films possessed an amorphous structure, and exhibited dielectric properties. Atomic force microscopy and Fourier transform infrared spectroscopy revealed granular structures and the existence of –OH groups, which may account for the diffusion of oxidants within the film.

OSTI ID:
22283043
Journal Information:
Applied Physics Letters, Vol. 104, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English