Band alignment of HfO{sub 2}/Al{sub 0.25}Ga{sub 0.75}N determined by x-ray photoelectron spectroscopy: Effect of SiH{sub 4} surface treatment

Journal Article · Mon Mar 03 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4867878· OSTI ID:22283042

Amin Bhuiyan, Maruf; Zhou, Qian; Yeo, Yee-Chia ^[1]; Zhang, Zheng; Sheng Pan, Ji ^[2]

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1. Department of Electrical and Computer Engineering, National University of Singapore, Singapore 119260 (Singapore)
2. Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)

The band-alignment of atomic layer deposited (ALD)-HfO{sub 2}/Al{sub 0.25}Ga{sub 0.75}N was studied by high resolution x-ray photoelectron spectroscopy measurements for both the non-passivated and SiH{sub 4} passivated AlGaN surfaces. The valence band offset and the conduction band offset for the ALD-HfO{sub 2}/Al{sub 0.25}Ga{sub 0.75}N interface were found to be 0.43 eV and 1.47 eV, respectively, for the non-passivated sample, and 0.59 eV and 1.31 eV, respectively, for the SiH{sub 4}-passivated sample. The difference in the band alignment is dominated by the band bending or band shift in the AlGaN substrate as a result of the different interlayers formed by the two surface preparations.

• OSTI ID: 22283042
• Journal Information: Applied Physics Letters, Vol. 104, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALIGNMENT
ALUMINIUM COMPOUNDS
DEPOSITION
ELECTRONIC STRUCTURE
GALLIUM NITRIDES
HAFNIUM OXIDES
INTERFACES
LAYERS
SILANES
SUBSTRATES
SURFACE TREATMENTS
SURFACES
VALENCE
X-RAY PHOTOELECTRON SPECTROSCOPY