Influence of graphene on quality factor variation in a silicon ring resonator

Journal Article · Mon Mar 03 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4867472· OSTI ID:22283025

Kou, Rai ^[1]; Tanabe, Shinichi; Hibino, Hiroki ^[2]; Tsuchizawa, Tai; Yamada, Koji ^[1]; Yamamoto, Tsuyoshi ^[3]; Nakajima, Hirochika ^[4]

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1. NTT Nanophotonics Center, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)
2. NTT Basic Research Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)
3. NTT Microsystem Integration Laboratories, NTT Corporation, Atsugi, Kanagawa 243-0198 (Japan)
4. Graduate School of Advanced Science and Engineering, Waseda University, Shinjuku, Tokyo 169-8555 (Japan)

Selectively patterned graphene is integrated onto a silicon ring resonator to investigate the quality factor (Q factor) variation. The Q factor sharply decreases from 7900 to 1200 as the patterned graphene length increases from 0 to 20 μm. A numerical estimation, which takes into account optical absorption by graphene, shows an exponential damping of the Q factor with increasing graphene length and is consistent with the experimental result. We expect these fundamental characterizations to be helpful in developing graphene-integrated silicon photonics applications.

• OSTI ID: 22283025
• Journal Information: Applied Physics Letters, Vol. 104, Issue 9; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
DAMPING
GRAPHENE
LENGTH
QUALITY FACTOR
RESONATORS
SILICON
VARIATIONS