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Title: Properties of zirconia thin films deposited by laser ablation

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.4832808· OSTI ID:22280637
 [1]; ; ;  [2];  [3]
  1. Department of Physics, University of Craiova, Craiova 200585 (Romania)
  2. Department of Lasers, National Institute for Laser, Plasma and Radiation Physics, Magurele 077125 (Romania)
  3. Horia Hulubei National Institute of Physics and Nuclear Engineering, Magurele, Bucharest (Romania)

Zirconia thin films have been deposited by laser ablation of a ceramic ZrO{sub 2} target in vacuum or in oxygen background at 0.01 mbar. The laser beam generated by an ArF laser (λ=193 nm, ν=40 Hz) has been focalized on the target through a spherical lens at an incident angle of 45°. The laser fluence has been established to a value from 2.0 to 3.4 Jcm{sup −2}. A silicon (100) substrate has been placed parallel to the target, at a distance of 4 cm, and subsequently has been heated to temperatures ranging between 300 °C and 600 °C. Thin films morphology has been characterized by atomic force microscopy and secondary ion mass spectrometry. Biocompatibility of these thin films has been assessed by studying the cell attachment of L929 mouse fibroblasts.

OSTI ID:
22280637
Journal Information:
AIP Conference Proceedings, Vol. 1564, Issue 1; Conference: TIM 2012 physics conference, Timisoara (Romania), 27-30 Nov 2012; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
Country of Publication:
United States
Language:
English