Probing graphene defects and estimating graphene quality with optical microscopy

Journal Article · Mon Jan 27 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4863080· OSTI ID:22280575

Lai, Shen ^[1]; Kyu Jang, Sung ^[1]; Lee, Sungjoo ^[1]

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1. SKKU Advanced Institute of Nanotechnology (SAINT), Suwon 440-746 (Korea, Republic of)

We report a simple and accurate method for detecting graphene defects that utilizes the mild, dry annealing of graphene/Cu films in air. In contrast to previously reported techniques, our simple approach with optical microscopy can determine the density and degree of dislocation of defects in a graphene film without inducing water-related damage or functionalization. Scanning electron microscopy, confocal Raman and atomic force microscopy, and X-ray photoelectron spectroscopy analysis were performed to demonstrate that our nondestructive approach to characterizing graphene defects with optimized thermal annealing provides rapid and comprehensive determinations of graphene quality.

• OSTI ID: 22280575
• Journal Information: Applied Physics Letters, Vol. 104, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
ATOMIC FORCE MICROSCOPY
COPPER
DISLOCATIONS
GRAPHENE
INTERFACES
OPTICAL MICROSCOPY
RAMAN SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY