Thermally-driven H interaction with HfO{sub 2} films deposited on Ge(100) and Si(100)

Journal Article · Mon Jan 27 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4862979· OSTI ID:22280574

Feijó, T. O. ^[1]; Baumvol, I. J. R. ^[1]; Aguzzoli, C. ^[2]; Krug, C. ^[1]; Radtke, C. ^[3]

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1. Instituto de Física, UFRGS, Porto Alegre 91509-900 (Brazil)
2. Universidade de Caxias do Sul, Caxias do Sul 95070-560 (Brazil)
3. Instituto de Química, UFRGS, Porto Alegre 91509-900 (Brazil)

In the present work, we investigated the thermally-driven H incorporation in HfO{sub 2} films deposited on Si and Ge substrates. Two regimes for deuterium (D) uptake were identified, attributed to D bonded near the HfO{sub 2}/substrate interface region (at 300 °C) and through the whole HfO{sub 2} layer (400–600 °C). Films deposited on Si presented higher D amounts for all investigated temperatures, as well as, a higher resistance for D desorption. Moreover, HfO{sub 2} films underwent structural changes during annealings, influencing D incorporation. The semiconductor substrate plays a key role in this process.

• OSTI ID: 22280574
• Journal Information: Applied Physics Letters, Vol. 104, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CRYSTAL STRUCTURE
DESORPTION
DEUTERIUM
GERMANIUM
HAFNIUM OXIDES
INTERFACES
LAYERS
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
TEMPERATURE DEPENDENCE
THIN FILMS
UPTAKE