Significant electrical control of amorphous oxide thin film transistors by an ultrathin Ti surface polarity modifier

Journal Article · Mon Jan 27 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4862537· OSTI ID:22280572

Cho, Byungsu ^[1]; Choi, Yonghyuk; Shin, Seokyoon ^[1]; Jeon, Heeyoung ^[2]; Seo, Hyungtak ^[3]; Jeon, Hyeongtag ^[1]

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1. Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
2. Department of Nano-scale Semiconductor Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)
3. Department of Materials Science and Engineering and Energy Systems Research, Ajou University, Suwon 443-739 (Korea, Republic of)

We demonstrate an enhanced electrical stability through a Ti oxide (TiO{sub x}) layer on the amorphous InGaZnO (a-IGZO) back-channel; this layer acts as a surface polarity modifier. Ultrathin Ti deposited on the a-IGZO existed as a TiO{sub x} thin film, resulting in oxygen cross-binding with a-IGZO surface. The electrical properties of a-IGZO thin film transistors (TFTs) with TiO{sub x} depend on the surface polarity change and electronic band structure evolution. This result indicates that TiO{sub x} on the back-channel serves as not only a passivation layer protecting the channel from ambient molecules or process variables but also a control layer of TFT device parameters.

• OSTI ID: 22280572
• Journal Information: Applied Physics Letters, Vol. 104, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
ELECTRICAL PROPERTIES
ELECTRONIC STRUCTURE
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LAYERS
OXYGEN
PHASE STABILITY
SURFACES
THIN FILMS
TITANIUM
TITANIUM OXIDES
TRANSISTORS