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Title: Polarization field engineering of GaN/AlN/AlGaN superlattices for enhanced thermoelectric properties

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4863420· OSTI ID:22280559
 [1]; ; ;  [1]
  1. Materials Department, University of California, Santa Barbara, California 93106 (United States)

A novel polarization field engineering based strategy to simultaneously achieve high electrical conductivity and low thermal conductivity in thermoelectric materials is demonstrated. Polarization based electric fields are used to confine electrons into two-dimensional electron gases in GaN/AlN/Al{sub 0.2}Ga{sub 0.8}N superlattices, resulting in improved electron mobilities as high as 1176 cm{sup 2}/Vs and in-plane thermal conductivity as low as 8.9 W/mK. The resulting room temperature ZT values reach 0.08, a factor of four higher than InGaN and twelve higher than GaN, demonstrating the potential benefits of this polarization based engineering strategy for improving the ZT and efficiencies of thermoelectric materials.

OSTI ID:
22280559
Journal Information:
Applied Physics Letters, Vol. 104, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English

Cited By (5)

Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering journal March 2018
Computationally predicted energies and properties of defects in GaN journal March 2017
Thermoelectric properties of In-rich InGaN and InN/InGaN superlattices journal April 2016
Built-in-polarization field effect on intrinsic and extrinsic thermal conductivities of AlN/GaN/AlN quantum well journal August 2015
Tuning Electrical and Thermal Transport in AlGaN/GaN Heterostructures via Buffer Layer Engineering preprint January 2017