Hydrogen in tin dioxide films and bulk ceramics: An attempt to identify the most hidden impurity

Journal Article · Mon Jan 27 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4863668· OSTI ID:22280532

Watanabe, Ken ^[1]; Hashiguchi, Minako; Sakaguchi, Isao; Bryant, Alex; Adachi, Yutaka; Zhen, Yuhua; Ohgaki, Takeshi; Ohsawa, Takeo; Haneda, Hajime ^[1]; Ohashi, Naoki ^[1]

---

1. National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

Hydrogen impurities in SnO{sub 2} films and bulk ceramics were investigated in terms of mass transport and electron transport. The hydrogen concentration (n[H]) in these samples was found to be 10{sup 19} cm{sup −3} or higher. Further increase in n[H] could be achieved by annealing the samples in a humid atmosphere. The isotope tracer ({sup 1}H/{sup 2}H exchange) study revealed that a part of the hydrogen in these samples showed rapid migration even at 300 °C. However, electrical measurements revealed that the electron concentration in the samples was much less than n[H]. These results could be explained by assuming the presence of defect-hydrogen complexes.

• OSTI ID: 22280532
• Journal Information: Applied Physics Letters, Vol. 104, Issue 4; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
CERAMICS
CONCENTRATION RATIO
DEUTERIUM
ELECTRONS
HYDROGEN
HYDROGEN 1
HYDROGEN COMPLEXES
TEMPERATURE DEPENDENCE
THIN FILMS
TIN OXIDES