The behavior of off-state stress-induced electrons trapped at the buffer layer in AlGaN/GaN heterostructure field effect transistors

Journal Article · Mon Jan 20 00:00:00 EST 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4862669· OSTI ID:22280510

Liao, W. C.; Chen, Y. L.; Chen, C. H.; Chyi, J. I.; Hsin, Y. M. ^[1]

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1. Department of Electrical Engineering, National Central University, Jhongli, Taiwan (China)

A measurement methodology involving the synchronous switching of gate to source voltage and drain to source voltage (V{sub DS}) was proposed for determining the shift of threshold voltage after an AlGaN/GaN heterostructure transistor endures high V{sub DS} off-state stress. The measurement results indicated slow electron detrapping behavior. The trap level was determined as (E{sub C} – 0.6 eV). Simulation tool was used to analyze the measurement results. The simulation results were consistent with the experimental results; and a relationship between the buffer trap and threshold voltage shift over time was observed.

• OSTI ID: 22280510
• Journal Information: Applied Physics Letters, Vol. 104, Issue 3; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
COMPUTERIZED SIMULATION
ELECTRIC POTENTIAL
ELECTRONS
FIELD EFFECT TRANSISTORS
GALLIUM NITRIDES
HETEROJUNCTIONS
INTERFACES
LAYERS
STRESSES
TRAPPING