The influence of semiconductive binary Sb{sub 2}S{sub 3}–Yb{sub 3}S{sub 4} system on electrical conductivity property of epoxy composites

Journal Article · Thu May 15 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4876775· OSTI ID:22280357

Soydal, Ulku; Ahmetli, Gulnare; Kocaman, Suheyla ^[1]

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1. Department of Chemical Engineering, Faculty of Engineering, Selcuk University, 42031 Konya (Turkey)

The purpose of this study is to develop the semiconductive composites. Semiconducting glass (SG) binary system Sb{sub 2}S{sub 3}–Yb{sub 3}S{sub 4} in mole ratio 1:1 was synthesized and was doped with I{sub 2}. Next, electrically conductive DGEBA-type epoxy resin (ER)/SG-filled composites and epoxy toluene oligomer (ETO) modified epoxy resin-SG filled composites were developed with 3–10 wt. % of fillers and characterized. As a result, the effects of the modifier and amount of semiconductive filler on the electrical properties of commercial epoxy resin were examined. Percolation concentration was 7 wt. % for all composites. For the SG-reinforced composites, the dispersion of the fillers is investigated by X-ray diffraction (XRD) and by scanning electron microscopy (SEM)

• OSTI ID: 22280357
• Journal Information: AIP Conference Proceedings, Vol. 1599, Issue 1; Conference: 7. international conference on times of polymers (TOP) and composites, Ischia (Italy), 22-26 Jun 2014; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANTIMONY SULFIDES
COMPOSITE MATERIALS
CONCENTRATION RATIO
DISPERSIONS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
EPOXIDES
FILLERS
GLASS
IODINE
REINFORCED MATERIALS
RESINS
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
TOLUENE
X-RAY DIFFRACTION
YTTERBIUM SULFIDES