Local droplet etching – Nanoholes, quantum dots, and air-gap heterostructures

Journal Article · Thu May 15 00:00:00 EDT 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4878285· OSTI ID:22280325

Heyn, Ch.; Sonnenberg, D.; Graf, A.; Kerbst, J.; Stemmann, A.; Hansen, W. ^[1]

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1. Institute of Applied Physics, University of Hamburg, Jungiusstr. 11, 20355 Hamburg (Germany)

Local droplet etching (LDE) allows the self-organized generation of nanoholes in semiconductor surfaces and is fully compatible with molecular beam epitaxy (MBE). The influence of the process parameters as well as of droplet and substrate materials on the LDE nanohole morphology is discussed. Furthermore, recent applications of LDE, the fabrication of quantum dots by hole filling and the creation of air-gap heterostructures are addressed.

• OSTI ID: 22280325
• Journal Information: AIP Conference Proceedings, Vol. 1598, Issue 1; Conference: LDSD 2011: 7. international conference on low dimensional structures and devices, Telchac (Mexico), 22-27 May 2011; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
AIR
DROPLETS
ETCHING
FABRICATION
HETEROJUNCTIONS
HOLES
MOLECULAR BEAM EPITAXY
MORPHOLOGY
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACES